Xilinx Samsung SmartSSD - computational storage drive - Enterprise - 3.84 TB - U.2 PCIe 3.0 x4 (NVMe)

Description

The Xilinx Samsung SmartSSD combines high capacity, exceptional performance, and advanced features to meet the demands of today's data-intensive environments. With a 3.84 TB capacity, it offers ample storage for large datasets, while the V-NAND Technology and Xilinx Kintex Ultrascale+ KU15P FPGA provide high-speed data access and transfer rates up to 3300 MB/s read and 2000 MB/s write. This SSD is designed for durability, featuring shock and vibration tolerance that ensures reliability in various operational conditions. Advanced features like Power Loss Protection and Inrush Current Protection safeguard against data loss and electrical surges, making it a reliable choice for enterprise applications. Additionally, its efficient power management system, with 25 W during active use and 18 W in idle, makes it an energy-conscious option for businesses looking to optimize their operational costs.

General

• Device Type: Solid state drive - internal
• Capacity: 3.84 TB
• Form Factor: 2.5"
• Interface: U.2 PCIe 3.0 x4 (NVMe)
• Features: V-NAND Technology, Power Loss Protection (PLP), NVM Express (NVMe) 1.3, programmable hardware accelerator, NVMe Management Interface (NVMe-MI) 1.0, Inrush Current Protection, Xilinx Kintex Ultrascale+ KU15P FPGA
• Width: 2.4 in
• Depth: 3.9 in
• Height: 0.6 in
• Weight: 14.11 oz

Performance

• Drive Writes Per Day (DWPD): 1
• Drive Class: Enterprise
• Internal Data Rate: 3300 MBps (read) / 2000 MBps (write)
• 4KB Random Read: 110000 IOPS
• 4KB Random Write: 800000 IOPS

Reliability

• MTBF: 2,000,000 hours
• Non-Recoverable Errors: 1 per 10^17
• Expansion & Connectivity
• Interfaces: 1 x PCI Express 3.0 x4 (NVMe)
• Compatible Bay: 2.5"

Power

• Power Consumption: 25 Watt (active) ¦ 18 Watt (idle)

Environmental Parameters

• Min Operating Temperature: 32 °F
• Max Operating Temperature: 158 °F
• Min Storage Temperature: -40 °F
• Max Storage Temperature: 185 °F
• Shock Tolerance (non-operating): 1500 g @ 0.5 ms half-sine wave
• Vibration Tolerance (non-operating): 20 g @ 10-2000 Hz

Key Selling Points

• 3.84 TB capacity for extensive storage needs
• Read and write speeds up to 3300 MB/s and 2000 MB/s
• Power Loss Protection (PLP) for enhanced data integrity
• V-NAND Technology and programmable hardware accelerator for superior performance
• Energy-efficient with 25 W active and 18 W idle power consumption

Product Features

• Enhanced durability
• Designed to withstand the rigors of both operation and non-operation, the Xilinx Samsung SmartSSD boasts a shock acceleration (non-operating) of 1500 g and a vibration acceleration (non-operating) of 20 g, ensuring reliability and longevity under demanding conditions.
• High-capacity storage
• With a generous 3.84 TB capacity, this solid state drive meets the needs of intensive data users, providing ample space for large files, high-resolution media, and extensive software libraries.
• Exceptional performance
• Leveraging the power of V-NAND Technology and a programmable hardware accelerator, the Xilinx Kintex Ultrascale+ KU15P FPGA, this SSD delivers outstanding read and write speeds up to 3300 MB/s and 2000 MB/s respectively, ensuring swift data access and transfer.
• Advanced features for reliability
• Features such as Power Loss Protection (PLP) and Inrush Current Protection safeguard your data against unexpected power outages and electrical surges, enhancing data integrity and system stability.
• Efficient power management
• With an active power consumption of 25 W and an idle power consumption of 18 W, this SSD balances high performance with energy efficiency, making it an ideal choice for enterprise environments concerned with operational costs.